HMC320MS8GE(V02) Ver la hoja de datos (PDF) - Hittite Microwave
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HMC320MS8GE Datasheet PDF : 6 Pages
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v02.0607
HMC320MS8G / 320MS8GE
GaAs MMIC LOW NOISE
AMPLIFIER , 5.0 - 6.0 GHz
5
Adaptive Biasing
Optimizing P1dB Performance
The bias level may be changed to adjust the P1dB and return loss performance. The table below contains the HMC-
320MS8G RF performance as a function of various VSET and RBIAS settings. It will be necessary for the VSET
voltage source to provide 100uA of current to the amplifier. The Idd and Vdd quiescent performance will not change
as a function of changing the VSET voltage.
RF Performance at 5.8 GHz (Vdd = +3V)
VSET
(VDC)
0
3
3
3
RBIAS Resistor
Between Pin 3 and
GND (Ohms)
174
23
7
GND
(No Resistor)
Idd (mA)
7
25
40
60
Output
P1dB (dBm)
1.0
9.0
13.0
14.0
Output
Return Loss
(dB)
16.0
12.0
15.0
15.0
Applying the adaptive biasing
A dynamically controlled bias can be implemented with this design. A typical application wil include sens-
ing an RF signal level and then adjusting the VSET. The bias adjustment can be accomplished by either
analog or digitals means, after the RF signal has been detected and translated to a DC voltage using
external power detection circuitry.
Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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