MRF9745T1 Ver la hoja de datos (PDF) - Motorola => Freescale

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Fabricante

MRF9745T1

30 dBm, 900 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 6 V, ID = 25 µA)

Forward Transconductance

(VDS = 6 V, ID = 200 mA)

Resistance Drain–Source

(VGS = 4 V, ID = 100 mA)

VGS(th)

1

gfs

–

RDS(on)

–

2

3

Vdc

550

–

mmhos

1

2.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 6 V, VGS = 0, f = 1 MHz)

Output Capacitance

(VDS = 6 V, VGS = 0, f = 1 MHz)

Feedback Capacitance

(VDS = 6 V, VGS = 0, f = 1 MHz)

Ciss

–

14

–

pF

Coss

–

11

–

pF

Crss

–

1.8

–

pF

FUNCTIONAL CHARACTERISTICS

Power Gain

Gps

(VDD = 5.8 Vdc, Pin = 20 dBm, IDQ = 150 mA, f = 900 MHz)

Drain Efficiency

ηD

(VDD = 5.8 Vdc, Pin = 20 dBm, IDQ = 150 mA, f = 900 MHz)

Ruggedness Test

Ψ

(VDD = 5.8 Vdc, Pin = 20 dBm, IDQ = 150 mA, f = 900 MHz,

Load VSWR = 20:1, All Phase Angles at Frequency Test)

9.5

10

50

55

–

dB

–

%

No Degradation in Output Power after Test

Table 1. Large Signal Impedance

VDD = 5.8 V, Pin = 20 dBm, IDQ = 150 mA

f

MHz

Zin

Ohms

ZOL*

Ohms

850

7.0 – j6.4

6.1 – j5.1

900

5.2 – j6.5

5.9 – j4.6

950

5.2 – j6.0

6.1 – j4.7

ZOL* is the conjugate of the optimum load

impedance into which the device output operates

at a given output power, voltage and frequency.

MRF9745T1

2

MOTOROLA RF DEVICE DATA

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