MBR200100CT Ver la hoja de datos (PDF) - Naina Semiconductor ltd.
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MBR200100CT Datasheet PDF : 2 Pages
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Naina Semiconductor Ltd.
MBR20045CT thru
MBR200100CTR
Features
Silicon Schottky Diode, 200A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR20045CT
(R)
Repetitive peak
reverse voltage
VRRM
45
RMS reverse voltage VRMS
32
DC blocking voltage VDC
45
Average forward
current
IF(AV)
TC ≤ 135 oC
200
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25 oC
tp = 8.3 ms
1500
MBR20060CT
(R)
60
42
60
200
1500
MBR20080CT
(R)
80
56
80
200
1500
MBR200100C
T(R)
100
70
100
200
1500
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR20045CT
(R)
DC forward voltage
VF
IF = 100 A
TJ = 25 oC
0.68
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
5
200
MBR20060CT
(R)
0.76
5
200
MBR20080CT
(R)
0.88
5
200
MBR200100C
T(R)
0.88
5
200
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR20045CT
(R)
Thermal resistance
junction to case
RthJ-C
0.5
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MBR20060CT
(R)
0.5
- 40 to +175
MBR20080CT
(R)
0.5
- 40 to +175
MBR200100C
T(R)
0.5
- 40 to +175
Units
oC/W
oC
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
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