NTD80N02T4 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NTD80N02T4 Datasheet PDF : 8 Pages
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NTD80N02
5000
4000
10
VGS = 0 V
28
TJ = 25°C
QT
8
24
3000
2000
1000
Ciss
Coss
Crss
0
−8 −6 −4 −2 0 2 4 6 8 10 12 14 16 18 20 22 24
VGS VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
6 VD
4 Q1
Q2
VGS
20
16
12
8
2
ID = 1.0 A 4
TJ = 25°C
0
0
0
10
20
30
40
50
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1000
100
VDD = 20 V
ID = 20 A
VGS = 10 V
tr
tf
td(off)
10
td(on)
1
1
10
100
RG, GATE RESISTANCE (Ω)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
80
70 VGS = 0 V
TJ = 25°C
60
50
40
30
20
10
0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
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