BCR16CM Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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BCR16CM Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
I QUADRANT
III QUADRANT
100
80
#2
#1
60
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7
5
IFGT I
4
3
IRGT I
IRGT III
2
102
7
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
COMMUTATION CHARACTERISTICS
3 TYPICAL
2 EXAMPLE
102 Tj = 125°C
7 IT = 4A
5 τ = 500µs
3 VD = 200V
2 f = 3Hz
VOLTAGE WAVEFORM
t
(dv/dt)C VD
CURRENT WAVEFORM
IT
(di/dt)C
τ
t
101
7
I QUADRANT
5
3 MINIMUM
2 CHARAC-
100 TERISTICS
7 VALUE
5
III QUADRANT
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V
A
V
RG
TEST PROCEDURE 3
Feb.1999
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