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Fabricante

IRFP4868PBF

High Efficiency Synchronous Rectification in SMPS

International Rectifier 

IRFP4868PbF

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

V(BR)DSS

Drain-to-Source Breakdown Voltage

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

IDSS

Drain-to-Source Leakage Current

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

RG

Internal Gate Resistance

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

gfs

Forward Transconductance

Qg

Qgs

Qgd

Qsync

td(on)

tr

td(off)

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Total Gate Charge Sync. (Qg - Qgd)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

tf

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Coss eff. (ER) Effective Output Capacitance

(Energy Related) 

Coss eff. (TR) Effective Output Capacitance

(Time Related)

Diode Characteristics

Symbol

IS

Parameter

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

dv/dt

Diode Forward Voltage

Peak Diode Recovery 

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IRRM

Reverse Recovery Current

ton

Forward Turn-On Time

Notes:

 Repetitive rating; pulse width limited by max.

junction temperature.

 Limited by TJmax, starting TJ = 25°C, L = 1.2mH

RG = 50, IAS = 42A, VGS =10V. Part not

recommended for use above this value.

 ISD ≤ 42A, di/dt ≤ 1706A/µs, VDD ≤ V(BR)DSS, TJ ≤

175°C.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

Min.

300

–––

–––

3.0

–––

–––

–––

–––

–––

Typ.

–––

0.29

25.5

–––

–––

–––

–––

–––

1.1

Max. Units

Conditions

––– V VGS = 0V, ID = 250µA

––– V/°C Reference to 25°C, ID = 5mA

32 m VGS = 10V, ID = 42A 

5.0 V VDS = VGS, ID = 250µA

20 µA VDS = 300V, VGS = 0V

250

VDS = 300V, VGS = 0V, TJ = 125°C

100 nA VGS = 20V

-100

VGS = -20V

––– 

Min. Typ. Max. Units

Conditions

80 ––– ––– S VDS = 50V, ID = 42A

––– 180 270 nC ID = 42A

––– 60 –––

VDS =150V

––– 57 –––

VGS = 10V 

––– 123 –––

––– 24 –––

––– 16 –––

ID = 42A, VDS =0V, VGS = 10V

ns VDD = 195V

ID = 42A

––– 62 –––

––– 45 –––

RG = 1.0

VGS = 10V 

––– 10774 –––

––– 612 –––

––– 193 –––

pF VGS = 0V

VDS = 50V

ƒ = 1.0 MHz, See Fig. 5

––– 406 –––

VGS = 0V, VDS = 0V to 240V ,

See Fig. 11

––– 710 –––

VGS = 0V, VDS = 0V to 240V 

Min. Typ. Max. Units

Conditions

––– ––– 70 A MOSFET symbol

D

showing the

––– ––– 280 A integral reverse

G

p-n junction diode.

S

––– ––– 1.3 V TJ = 25°C, IS = 42A, VGS = 0V 

––– 7.3 ––– V/ns TJ = 25°C, IS = 42A, VDS = 300V

––– 351 –––

––– 454 –––

––– 2520 –––

––– 3686 –––

ns TJ = 25°C

TJ = 125°C

nC TJ = 25°C

TJ = 125°C

VR = 255V,

IF = 42A

di/dt = 100A/µs 

––– 16 ––– A TJ = 25°C

Intrinsic turn-on time is negligible (turn-on is dominated by

LS+LD)

 Coss eff. (TR) is a fixed capacitance that gives

the same charging time as Coss while VDS is

rising from 0 to 80% VDSS.

 Coss eff. (ER) is a fixed capacitance that gives

the same energy as Coss while VDS is rising

from 0 to 80% VDSS.

 R is measured at TJ approximately 90°C.

 RJC value shown is at time zero.

2 www.irf.com © 2012 International Rectifier

October 30, 2012

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