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NNCD10E Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza
componentes Descripción
Fabricante
NNCD10E
NEC
NEC => Renesas Technology NEC
NNCD10E Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NNCD3.3E to NNCD12E
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Type Number
Breakdown VoltageNote 1
VBR (V)
Dynamic
ImpedanceNote 2
Zz ()
Reverse Leakage
IR (µA)
MIN. MAX. IT (mA) MAX. IT (mA) MAX. VR (V)
NNCD3.3E
3.10 3.50
5
130
5
NNCD3.6E
3.40 3.80
5
130
5
NNCD3.9E
3.70 4.10
5
130
5
NNCD4.3E
4.01 4.48
5
130
5
NNCD4.7E
4.42 4.90
5
130
5
NNCD5.1E
4.84 5.37
5
130
5
NNCD5.6E
5.31 5.92
5
80
5
NNCD6.2E
5.86 6.53
5
50
5
NNCD6.8E
6.47 7.14
5
30
5
NNCD7.5E
7.06 7.84
5
30
5
NNCD8.2E
7.76 8.64
5
30
5
NNCD9.1E
8.56 9.55
5
30
5
NNCD10E
9.45 10.55
5
30
5
NNCD11E
10.44 11.56
5
30
5
NNCD12E
11.42 12.60
5
35
5
20
1.0
10
1.0
10
1.0
10
1.0
10
1.0
5
1.5
5
2.5
2
3.0
2
3.5
2
4.0
2
5.0
2
6.0
2
7.0
2
8.0
2
9.0
Capacitance
Ct (pF)
TYP.
220
210
200
180
170
160
140
120
110
90
90
90
80
70
70
TEST
CONDITION
VR = 0 V
f = 1 MHz
E.S.D Voltage
(kV)
MIN.
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
TEST
CONDITION
C = 150 pF
R = 330
(IEC1000
-4-2)
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
2

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