DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2MBI50N-060 Ver la hoja de datos (PDF) - Fuji Electric

Número de pieza
componentes Descripción
Fabricante
2MBI50N-060 Datasheet PDF : 4 Pages
1 2 3 4
Collector current vs. Collector-Emitter voltage
Tj=25°C
125
VGE= 20V, 15V, 12V
100
75
10V
50
25
0
0
1
2
3
4
Collector-Emitter voltage : VCE [V]
8V
5
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
8
6
IC=
4
100A
50A
2
25A
0
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
VCC=300V, RG=51, VGE=±15V, Tj=25°C
1000
ton
toff
tr
tf
100
Collector current vs. Collector-Emitter voltage
Tj=125°C
125
VGE= 20V, 15V, 12V,
100
75
10V
50
25
0
0
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
8
6
IC=
4
100A
50A
2
25A
0
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
VCC=300V, RG=51, VGE=±15V, Tj=125°C
1000
toff
ton
tr
tf
100
10
0
20
40
60
80
Collector current : IC [A]
10
0
20
40
60
80
Collector current : IC [A]

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]