BUP400D Ver la hoja de datos (PDF) - Siemens AG

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Fabricante

BUP400D

IGBT With Antiparallel Diode

Siemens AG 

BUP 400D

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

td(on)

VCC = 300 V, VGE = 15 V, IC = 10 A

RGon = 100 Ω

-

45

Rise time

tr

VCC = 300 V, VGE = 15 V, IC = 10 A

RGon = 100 Ω

-

60

Turn-off delay time

td(off)

VCC = 300 V, VGE = -15 V, IC = 10 A

RGoff = 100 Ω

-

250

Fall time

tf

VCC = 300 V, VGE = -15 V, IC = 10 A

RGoff = 100 Ω

-

500

ns

70

90

340

680

Free-Wheel Diode

Diode forward voltage

IF = 10 A, VGE = 0 V, Tj = 25 °C

IF = 10 A, VGE = 0 V, Tj = 125 °C

Reverse recovery time

IF = 10 A, VR = -300 V, VGE = 0 V

diF/dt = -100 A/µs

Tj = 25 °C

Tj = 125 °C

Reverse recovery charge

IF = 10 A, VR = -300 V, VGE = 0 V

diF/dt = -100 A/µs

Tj = 25 °C

Tj = 125 °C

VF

-

-

trr

-

-

Qrr

-

-

V

1.65 -

-

-

ns

60

100

100

150

µC

0.2

0.37

0.4

0.74

Semiconductor Group

3

Jul-31-1996

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