TC51WHM516AXBN65 Ver la hoja de datos (PDF) - Toshiba
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TC51WHM516AXBN65 Datasheet PDF : 11 Pages
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TC51WHM516AXBN65,70
AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta = −25°C to 85°C, VDD = 2.6 to 3.3 V) (See Note 5 to 11)
SYMBOL
PARAMETER
tRC
tACC
tCO
tOE
tBA
tCOE
tOEE
tBE
tOD
tODO
tBD
tOH
tPM
tPC
tAA
tAOH
tWC
tWP
tCW
tBW
tAW
tAS
tWR
tODW
tOEW
tDS
tDH
tCS
tCH
tDPD
tCHC
tCHP
Read Cycle Time
Address Access Time
Chip Enable ( CE1 ) Access Time
Output Enable Access Time
Data Byte Control Access Time
Chip Enable Low to Output Active
Output Enable Low to Output Active
Data Byte Control Low to Output Active
Chip Enable High to Output High-Z
Output Enable High to Output High-Z
Data Byte Control High to Output High-Z
Output Data Hold Time
Page Mode Time
Page Mode Cycle Time
Page Mode Address Access Time
Page Mode Output Data Hold Time
Write Cycle Time
Write Pulse Width
Chip Enable to End of Write
Data Byte Control to End of Write
Address Valid to End of Write
Address Set-up Time
Write Recovery Time
WE Low to Output High-Z
WE High to Output Active
Data Set-up Time
Data Hold Time
CE2 Set-up Time
CE2 Hold Time
CE2 Pulse Width
CE2 Hold from CE1
CE2 Hold from Power On
TC51WHM516AXBN
65
70
MIN
MAX
MIN
MAX
65
10000
70
10000
65
70
65
70
25
25
25
25
10
10
0
0
0
0
20
20
20
20
20
20
10
10
65
10000
70
10000
30
30
30
30
10
10
65
10000
70
10000
50
50
65
70
60
60
60
60
0
0
0
0
20
20
0
0
30
30
0
0
0
0
300
300
10
10
0
0
30
30
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
ns
µs
AC TEST CONDITIONS
PARAMETER
Output load
Input pulse level
Timing measurements
Reference level
tR, tF
CONDITION
30 pF + 1 TTL Gate
VDD − 0.2 V, 0.2 V
VDD × 0.5
VDD× 0.5
5 ns
2002-08-22 4/11
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