MGF4952A Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
Número de pieza
componentes Descripción
Fabricante
MGF4952A Datasheet PDF : 5 Pages
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June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4951A/MGF4952A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
S PARAMETERS
f
(GHz)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
S11
Magn. Angle
0.978 -14.5
0.930 -26.3
0.884 -43.8
0.818 -59.6
0.768 -71.1
0.722 -80.2
0.681 -88.9
0.652 -100.4
0.627 -17.3
0.593 -114.4
0.542 -123.2
0.475 -133.8
0.406 -148.6
0.333 -178.7
0.298 147.3
0.338 110.1
0.443
81.5
0.564
60.0
0.675
44.4
0.763
32.1
0.846
18.5
0.892
8.8
0.912
1.4
0.927
-4.8
0.932
-9.4
0.933 -14.0
(Ta=25°C,VDS=2V,ID=10mA)
S21
Magn. Angle
4.800 163.6
4.857 152.8
4.702 133.4
4.514 119.5
4.224 108.2
4.008
98.9
3.841
89.8
3.681
45.6
3.540
66.6
3.476
57.5
3.474
47.7
3.487
37.0
3.458
25.5
3.415
7.5
3.309
-5.6
3.150 -20.1
2.965 -34.2
2.670 -48.8
2.323 -62.6
2.030 -74.2
1.714 -90.8
1.457 -101.1
1.233 -109.9
1.026 -118.4
0.864 -124.7
0.732 -130.2
S12
Magn. Angle
0.019
78.3
0.037
72.5
0.053
59.5
0.066
51.1
0.076
44.7
0.084
40.1
0.092
36.6
0.099
27.8
0.108
24.0
0.117
21.3
0.130
15.6
0.142
9.6
0.153
2.4
0.162 -11.0
0.172 -20.2
0.175 -30.0
0.176 -39.6
0.171 -50.4
0.159 -60.0
0.146 -69.4
0.133 -80.3
0.119 -86.8
0.104 -92.2
0.093 -95.3
0.080 -98.0
0.069 -100.6
S22
Magn. Angle
0.525 -13.5
0.513 -22.5
0.491 -37.6
0.458 -47.5
0.449 -54.6
0.444 -58.7
0.439 -61.2
0.440 -68.2
0.444 -70.2
0.442 -72.3
0.418 -76.0
0.380 -78.3
0.326 -82.4
0.234 -90.5
0.132 -83.7
0.068 -20.3
0.169
25.0
0.301
26.1
0.431
21.3
0.537
15.7
0.612
4.5
0.684
1.2
0.749
-2.5
0.796
-5.5
0.843
-7.1
0.881
-8.6
NOISE PARAMETERS (Ta=25°C,VDS=2V,ID=10mA)
f
(GHz)
4.0
8.0
12.0
14.0
18.0
Ganma-opt
Magn. Angle
0.64
49.7
0.61 100.5
0.55 143.4
0.51 158.9
0.41 172.5
Rn
(ohm)
0.21
0.12
0.04
0.03
0.06
NF
(dB)
0.21
0.31
0.45
0.52
0.66
Note) Rn is normalized by 50-ohm
Reference Point
Gate
Source
Reference Point
Source
Drain
MITSUBISHI
(4/5)
June/2004
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