1N4383GPHE3/54 Ver la hoja de datos (PDF) - Vishay Semiconductors
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1N4383GPHE3/54 Datasheet PDF : 4 Pages
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1N4383GP thru 1N4385GP, 1N4585GP, 1N4586GP
Vishay General Semiconductor
100
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
TJ = 25 °C
10
Pulse Width = 300 μs
1 % Duty Cycle
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
10
100
TJ = 125 °C
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
MIN.
0.140 (3.6)
0.104 (2.6)
DIA.
Document Number: 88507 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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