DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

T620-800W Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
T620-800W
ST-Microelectronics
STMicroelectronics ST-Microelectronics
T620-800W Datasheet PDF : 5 Pages
1 2 3 4 5
T820W / T830W
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
T620
IGT(1)
VD=12V RL=30
I-II-III MAX.
20
VGT
I-II-III MAX.
1.3
VGD
IH (2)
VD=VDRM RL=3.3kTj = 125°C
IT= 100mA
I-II-III
MIN.
MAX.
0.2
35
IL
IG = 1.2IGT
I - III
MAX.
50
II
MAX.
60
dV/dt (2) VD=67% VDRM Gate open Tj = 125°C
(dI/dt)c (2) Without snubber Tj = 125°C
MIN.
300
MIN.
3.3
T630
30
50
70
80
500
4.5
Unit
mA
V
V
mA
mA
mA
V/µs
A/ms
STATIC CHARACTERISTICS
Symbol
Test Conditions
VTM(2)
VTO(2)
Rd(2)
ITM = 8.5 A tp = 380µs
Threshold voltage
Dynamic resistance
Tj = 25°C
Tj = 125°C
Tj = 125°C
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
Tj = 125°C
Note 1: Minimum IGT is guaranted at 5% of IGT max.
Note 2: For both polarities of A2 referenced to A1.
MAX.
MAX.
MAX.
MAX
Value
1.4
0.85
50
5
1
Unit
V
V
m
µA
mA
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-a) Junction to ambient
Rth(j-c) Junction to case for A.C (360° conduction angle)
Value
50
3.4
Unit
°C/W
°C/W
PRODUCT SELECTOR
Part Number
Voltage
T620-600W
600V
T620-800W
800V
T630-600W
600V
T630-800W
800V
Sensitivity
20 mA
20 mA
30 mA
30 mA
Type
Snubberless
Snubberless
Snubberless
Snubberless
Package
ISOWATT220AB
ISOWATT220AB
ISOWATT220AB
ISOWATT220AB
2/5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]