BUX41 Ver la hoja de datos (PDF) - Inchange Semiconductor

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BUX41

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BUX41

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0, L= 25mH

200

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

7

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB=B 1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 8A; IB=B 1A

ICEO

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE= 160V; IB= 0

VCE= 250V; VBE= -1.5V

VCE= 250V; VBE= -1.5V; TC= 125℃

VEB= 5V; IC=0

1.2 V

1.6 V

2.0 V

1.0 mA

1.0

5.0

mA

1.0 mA

hFE-1

DC Current Gain

IC= 5A ; VCE= 4V

15

45

hFE-2

DC Current Gain

IC= 8A ; VCE= 4V

8

fT

Current-Gain—Bandwidth Product IC= 1A ; VCE= 15V

8

MHz

Switching Times; Resistive Laod

ton

Turn-on Time

ts

Storage Time

tf

Fall Time

IC= 8A ;IB1= -IB2= 1A;

VCC= 150V; RC= 18.75Ω

0.6 μs

1.5 μs

0.4 μs

isc Website：www.iscsemi.cn

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