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TN2540N8 Ver la hoja de datos (PDF) - Supertex Inc

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TN2540N8 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
TN2540
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter
Min
Typ
Max
Units Conditions
BVDSS
VGS(th)
ΔVGS(th)
IGSS
Drain-to-source breakdown voltage
Gate threshold voltage
VGS(th) change with temperature
Gate body leakage current
IDSS
Zero gate voltage drain current
400
-
-
V
VGS = 0V, ID = 100µA
0.6
-
2.0
V
VGS = VDS, ID = 1.0mA
-
-2.5
-4.0 mV/OC VGS = VDS, ID = 1.0mA
-
-
100
nA VGS = ±20V, VDS = 0V
-
-
10
µA VGS = 0V, VDS = Max rating
-
-
1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
ID(ON) ON-state drain current
0.3 0.5
-
0.75 1.0
-
A
VGS = 4.5V, VDS = 25V
VGS = 10V, VDS = 25V
RDS(ON)
Static drain-to-source ON-state
resistance
-
8.0
12
-
8.0
12
V = 4.5V, I = 150mA
Ω
GS
D
VGS = 10V, ID = 500mA
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
0.75
%/OC VGS = 10V, ID = 500mA
GFS
Forward transconductance
125 200
-
mmho VDS = 25V, ID = 100mA
CISS
Input capacitance
-
95 125
VGS = 0V,
COSS Common source output capacitance
-
20
70
pF VDS = 25V,
f = 1.0MHz
CRSS Reverse transfer capacitance
-
10
25
td(ON)
tr
td(OFF)
tf
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
-
-
20
-
-
15
VDD = 25V,
-
-
25
ns ID = 1.0A,
RGEN = 25Ω
-
-
20
VSD
Diode forward voltage drop
-
-
1.8
V
VGS = 0V, ISD = 200mA
trr
Reverse recovery time
-
300
-
ns
VGS = 0V, ISD = 1.0A
Notes:
1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
3

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