T830-8FP Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
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Fabricante
T830-8FP Datasheet PDF : 9 Pages
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T830-8FP
Characteristics
Table 4. Static characteristics
Symbol
VT (1)
Vt0 (1)
Rd (1)
ITM = 11 A, tp = 380 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VDRM = VRRM
1. For both polarities of A2 referenced to A1.
Test conditions
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Table 5. Thermal resistance
Symbol
Parameter
Rth(j-c)
Rth(j-a)
Junction to case (AC)
Junction to ambient
Max.
Max.
Max.
Max.
Value
Unit
1.55
V
0.85
V
40
m
5
µA
1
mA
Value
3.5
60
Unit
°C/W
°C/W
Figure 1.
P(W)
10
α =180 °
8
Maximum power dissipation versus Figure 2.
rms on-state current
10 IT(RMS)(A)
8
On-state rms current versus case
temperature
α =180°
6
6
4
4
2
180°
2
IT(RMS)(A)
0
0
TC(°C)
0
2
4
6
8
0
25
50
75
100
125
Figure 3.
On-state rms current versus
ambient temperature
(free air convection)
3.0 IT(RMS)(A)
2.5
α = 180°
2.0
Figure 4. Relative variation of thermal
impedance versus pulse duration
1.0E+00 K = [Zth / Rth]
Zth(j-c)
Zth(j-a)
1.5
1.0E-01
1.0
0.5
0.0
0
Ta(°C)
tp (s)
1.0E-02
25
50
75
100
125
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05
Doc ID 023366 Rev 1
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