T830-8FP Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
T830-8FP Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
T830-8FP
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
IT(rms)
ITSM
I²t
dI/dt
VDSM,
VRSM
IGM
PG(AV)
Tstg
Tj
TL
Vins
On-state rms current (full sine wave)
Tc = 95 °C
8
Non repetitive surge peak on-state F = 50 Hz t = 20 ms
80
current (full cycle, Tj initial = 25 °C) F = 60 Hz t = 16.7 ms
84
I²t Value for fusing
tp = 10 ms
42
Critical rate of rise of on-state
current IG = 2 x IGT, tr 100 ns
F = 120 Hz Tj = 125 °C
100
Non repetitive surge peak on-state
voltage
tp = 10 ms
Tj = 25 °C
900
Peak gate current
Average gate power dissipation
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Tj = 125 °C
Tj = 125 °C
4
1
- 40 to + 150
- 40 to + 125
Lead temperature for soldering during 10 s
260
(at 4 mm from case)
Insulation rms voltage, 1 minute
1500
A
A
A²s
A/µs
V
A
W
°C
°C
V
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrant
Value
IGT (1)
VGT
VGD
IH (2)
IL
dV/dt
VD = 12 V, RL = 30
VD = VDRM, RL = 3.3 kTj = 125 °C
IT = 250 mA
IG = 1.2 IGT
VD = 67%VDRM, gate open
I - II - III
Max.
I - II - III
Min.
Max.
I - II - III
Max.
Tj = 125 °C Min.
30
1.3
0.2
50
60
2500
(dI/dt)c Without snubber
Tj = 125 °C Min.
10.0
1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1.
Unit
mA
V
V
mA
mA
V/µs
A/ms
2/9
Doc ID 023366 Rev 1
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