LT2A01G Ver la hoja de datos (PDF) - Vishay Semiconductors
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LT2A01G Datasheet PDF : 4 Pages
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LT2A01G–LT2A07G
Vishay Lite–On Power Semiconductor
Characteristics (Tj = 25_C unless otherwise specified)
2.5
100
2.0
1.5
10
1.0
Tj = 25°C
f = 1 MHz
0.5
0
25 50 75 100 125 150 175 200
15561
Tamb – Ambient Temperature ( °C )
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
10
1.0
0.1
0.01
0
15562
Tj = 25°C
IF Pulse Width = 300 µs
2% Duty Cycle
0.4
0.8
1.2
1.6
VF – Forward Voltage ( V )
Figure 2. Typ. Forward Current vs. Forward Voltage
75
60
45
15564
1.0
1.0
10
100
VR – Reverse Voltage ( V )
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
1000
100
Tj = 150°C
10
Tj = 125°C
1.0
0.1
Tj = 25°C
0.01
0 20 40 60 80 100 120 140
15565
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
30
15
8.3 ms Single Half–Sine–Wave
JEDEC method
0
1
10
100
15563
Number of Cycles at 60 Hz
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
2 (4)
Rev. A2, 24-Jun-98
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