DN3545N8-G Ver la hoja de datos (PDF) - Supertex Inc
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DN3545N8-G Datasheet PDF : 6 Pages
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DN3545
Thermal Characteristics
Package
T0-92
ID
(continuous)1
136mA
ID
(pulsed)
550mA
Power Dissipation
@TA = 25OC
0.74W
θjc
OC/W
125
θja
OC/W
170
IDR1
136mA
IDRM
550mA
TO-243AA
200mA
550mA
1.6W2
15
782
Notes:
1. ID (continuous) is limited by max rated Tj.
2. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
200mA
550mA
Electrical Characteristics (@25OC unless otherwise specified)
Symbol Parameter
Min Typ Max Units Conditions
BVDSX Drain-to-source breakdown voltage 450
-
-
V VGS = -5V, ID = 100µA
VGS(OFF) Gate-to-source OFF voltage
-1.5
-
-3.5
V VDS = 25V, ID= 10µA
ΔVGS(OFF) Change in VGS(OFF) with temperature
-
-
4.5 mV/OC VDS = 25V, ID= 10µA
IGSS Gate body leakage current
-
-
100
nA VGS = ± 20V, VDS = 0V
I
Drain-to-source leakage current
D(OFF)
-
-
1.0
µA VGS = -5V, VDS = Max Rating
-
-
1.0
mA
VGS = -5V, VDS = 0.8 Max Rating
TA = 125°C
IDSS Saturated drain-to-source current
200
-
-
mA VGS = 0V, VDS = 15V
RDS(ON)
Static drain-to-source
on-state resistance
-
-
20
Ω VGS = 0V, ID = 150mA
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
1.1 %/OC VGS = 0V, ID = 150mA
GFS Forward transductance
150
-
-
m ID = 100mA, VDS = 10V
CISS Input capacitance
-
-
360
COSS Common source output capacitance -
-
40
pF VGS = -5V, VDS = 25V, f = 1MHz
CRSS Reverse transfer capacitance
-
-
15
td(ON) Turn-ON delay time
-
-
20
tr
td(OFF)
Rise time
Turn-OFF delay time
-
-
30
ns VDD = 25V, ID = 150mA,
-
-
30
RGEN = 25Ω,VGS = 0V to -10V
tf
Fall time
-
-
40
VSD Diode forward voltage drop
-
-
1.8
V VGS = -5V, ISD = 150mA
trr
Reverse recovery time
-
800
-
ns VGS = -5V, ISD = 150mA
Switching Waveforms and Test Circuit
VDD
0V
INPUT
-10V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
Rgen
INPUT
RL
OUTPUT
D.U.T.
2
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