2SD1133 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SD1133

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1133

DESCRIPTION

·Collector Current: IC= 4A

·Low Collector Saturation Voltage

: VCE(sat)= 1.0V(Max)@IC= 2A

·High Collector Power Dissipation

·Complement to Type 2SB857

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

70

V

VCEO Collector-Emitter Voltage

50

V

VEBO Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

4

A

ICM

Collector Current-Peak

PC

Total Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

8

A

40

W

150

℃

-45~150 ℃

isc Website：www.iscsemi.cn

Share Link: