2SD1135 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SD1135

Silicon NPN Triple Diffused

Renesas Electronics 

2SD1135

Silicon NPN Triple Diffused

Application

Low frequency power amplifier complementary pair with 2SB859

Outline

TO-220AB

ADE-208-906 (Z)

1st. Edition

September 2000

1

23

1. Base

2. Collector

(Flange)

3. Emitter

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC * 1

Tj

Tstg

Ratings

Unit

100

V

80

V

5

V

4

A

8

A

40

W

150

°C

–45 to +150

°C

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