2N3055 Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd
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2N3055 Datasheet PDF : 4 Pages
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SEMICONDUCTOR
2N3055(NPN)
MJ2955(PNP) RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
ICEX
Collector cutoff current
VCE = 100V, VBE = -1.5V
VCE = 100V, VBE = -1.5V, TC = 150°C
ICEO
IEBO
Collector cutoff current
Emitter cutoff current
VCE = 30V, lB = 0
VEBO = 7V, lC = 0
VCEO(SUS)* Collector to emitter sustaining voltage
lC = 200mA, lB = 0
60
VCER(SUS)* Collector to emitter sustaining voltage
lC = 200mA, RBE = 100Ω
70
VCBO
Collector to base voltage
lE = 0
100
VEBO
Emitter to base voltage
lC = 0
7
lC = 4A, VCE = 4V
20
hFE
Forward current transfer ratio (DC current gain)
lC = 10A, VCE = 4V
5
VCE(sat)* Collector to emitter saturation voltage
VBE(on)* Base to emitter on voltage
fT
Transition frequency
lC = 4A, lB = 400mA
lC = 10A, lB = 3.3A
VCE = 4V
lC = 0.5A, VCE = 10V, f = 1.0MHZ
2.5
Second breakdown collector current with base
ls/b*
VCE = 40V, t = 1.0s
forward baised
2.87
*Pulsed : Pulse duration = 300 µs, duty cycle 1.5%.
*For PNP types voltage and current values are negative.
MAX
1.0
5.0
0.7
5.0
70
1.1
3.0
1.5
mA
mA
V
V
MHZ
A
Fig.1 Power derating
160
140
120
100
80
60
40
20
0
0
25 50 75 100 125 150 175 200
TC, Case temperature (°C)
www.nellsemi.com
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