R5509-42 Ver la hoja de datos (PDF) - Hamamatsu Photonics

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R5509-42

PHOTOMULTIPLIER TUBES

Hamamatsu Photonics 

The samples 2 to 6 , 11 and 12 were measured with the measurement system shown below:

Measurement System

Most of the application data in this sheet were measured with the following system using an R5509 series PMT.

Time resolved measurement and gated measurement were performed with a pulsed YAG laser and a photon counter in place of CW

laser and lock-in amplifier.

ISTRUCTURE

Excitation light: LD-pumped Nd: (SHG) YAG laser,

λ=532 nm, maximum output=50 mW

or

Pulsed Nd: (SHG) YAG laser,

λ=532 nm, pulse energy more than 12 mJ,

repetition rate=20 Hz, pulse with=5 ns to 7 ns

Monochromator: Czerny-Turner type

Aperture ratio: F=3, Focal length: 100 mm,

Diffraction grating: grooves/mm=600,

Brazed wavelength=1 µm, Wavelength resolution: 2 nm

Detector: NIR PMT R5509-42 or R5509-72

Exclusive cooler PC176TSCE005 [Cooling Temperature: -80 °C]

Sample cell: LN2 dewar or without

Signal processing: Lock-in amplifier or photon counter

ISYSTEM CONFIGURATION

WITH CW LASER + LOCK-IN AMPLIFIER

OPTICAL

CHOPPER

MIRROR

FILTER

LASER

MIRROR

DRY NITROGEN

LN2

DEWAR LENS

FILTER

MONOCHRO-

MATOR

LENS COOLER

LIQUID NITROGEN

CONTAINER

LOCK-IN

AMP

SAMPLE

NIR-PMT

COMPUTER

TPMOC0155EA

GREFERENCE

Photocathode and Photomultiplier tubes

1. M. Niigaki, T. Hirohata, T. Suzuki, N. Oishi, S. Furuta, H. Kan and T. Hiruma, "Near Infrared Photomultiplier with Transferred Electron Photoca-

thode", Bulletin of the Research Institute of Electronics, Shizuoka Univ. 30-3, 189 (1995)

2. M. Niigaki, T. Hirohata, T. Suzuki, H. Kan and T. Hiruma, "Field-assisted photoemission from InP/InGaAsP photocathode with p/n junction",

Appl. Phys. Lett., 71, 2493 (1997)

Photoluminescence

3. S. Furuta, K. Kuroyanagi, M. Niigaki, T. Hirohata, H. Kan and T. Hiruma, "Characterization of Doped-Si and SiGe Quantum Well Using Near-In-

frared Photomultiplier Tube", Bulletin of the Research Institute of Electronics, Shizuoka Univ. 30-3, 233 (1995).

4. S. Fukatsu, H. Akiyama, Y. Shiraki and H. Sakaki, J. Cryst. Growth, "Quantitative analysis of light emission from SiGe quantum wells", 157 1

(1995)

5. S. Fukatsu, H. Akiyama, Y. Shiraki and H. Sakaki, "Radiative recombination in near-surface strained Si1-xGex/Si quantum wells", Appl. Phys.

Lett., 67, 3602 (1995)

6. S. Fukatsu, Y. Mera, M. Inoue, K. Maeda, H. Akiyama and H. Sakaki, "Time-resolved D-band luminescence in strain-relieved SiGe/Si", Appl.

Phys. Lett., 68, 1889 (1996)

7. M. Tajima, S. Ibuka, H. Aga and T. Abe, "Characterization of bond etch-back silicon-on-insulator wafers by photoluminescence under ultravio-

let excitation", Appl. Phys. Lett., 70, 231 (1997)

8. M. Tajima and S. Ibuka, "Luminescence due to electron-hole condensation in silicon-on-insulator", Jpn. J. Appl. Phys., 84, 2224 (1998)

9. Y. Mita, M. Akami and S. Murayama, "Infrared photoluminescence and optical characteristics in Ge-doped ZnSe crystals", Appl. Phys. Lett., 76,

2223 (2000)

10. Takashi Suemasu, Yoichiro Negishi, Kenichiro Takakuma and Fumio Hasegawa, "Room Temperature 1 µm Electroluminescence from a Si-

Based Light Emitting Diode with β-FeSi2 Active Region", Jpn. J. Appl. Phys., 39, L1013 (2000)

11. Shigero Ibuka and Michio Tajima, "Characteristics of Silicon-on-Insulator Wafers by Photoluminescence Decay Lifetime Measurement", Jpn. J.

Appl. Phys., 39, L1124 (2000)

Singlet oxygen

12. O. Shimizu, J. Watanabe, K. Imakubo and S. Naito, "Formation of Singlet Oxygen Photosensitized by Aromaic Amino Acids in Aqueous Solu-

tions", Chemistry Lett., 19, 203 (1997)

13. O. Shimizu, J. Watanabe and K. Imakubo, "Photon-Counting Technique Facilitates both Time-and Spectra-Resolved Measurements of Near-IR

Emission of Singlet Oxygen O2(1∆g) in Aqueous Solution", J. Phys. Soc. Jpn., 66, 268 (1997)

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