PF0031 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

PF0031

MOS FET Power Amplifier Module for Mobile Phone

Hitachi -> Renesas Electronics 

PF0031

Electrical Characteristics (Tc = 25°C)

Item

Symbol

Drain cutoff current IDS

Total efficiency

ηT

2nd harmonic distortion 2nd H.D.

3rd harmonic distortion 3rd H.D.

Input VSWR

VSWR (in)

Output VSWR

VSWR (out)

Stability

—

Min Typ Max Unit

—

—

500 µA

35 40 — %

—

–50 –30 dB

—

–50 –30 dB

—

1.5 3

—

—

1.5 —

—

No parasitic oscillation —

Test Condition

VDD = 17 V, VAPC = 0 V, Rg = RL= 50 Ω

Pin = 2 mW, VDD = 12.5 V,

Pout = 6 W (at APC controlled)

RL = Rg = 50 Ω

Pin = 2 mW, VDD = 12.5 V,

Pout = 6 W (at APC controlled),

RL = Rg = 50 Ω, Output VSWR = 20:1

All phases, t = 20sec

Test System Diagram

S.G

L.P.F 3dB

ATT

Power

Meter

Directional

Coupler

VAPC VDD

Test

Fixture

Spectrum

Analyzer

Directional

Coupler

RF SW. Power Meter

3

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