PF0031 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

PF0031

MOS FET Power Amplifier Module for Mobile Phone

Hitachi -> Renesas Electronics 

Pout vs. TC (1)

f = 890 MHz

VDD = 12.5 V

Pin = 2 mW

20 VAPC = 7.0 V

10

0

−40

0

40

80 120

Case Temperature TC (°C)

Pout vs. TC (2)

f = 915 MHz

VDD = 12.5 V

Pin = 2 mW

20 VAPC = 7.0 V

10

0

−40

0

40

80 120

Case Temperature TC (°C)

PF0031

11

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