IXZR16N60 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXZR16N60 Datasheet PDF : 4 Pages
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IXZR16N60 & IXZR16N60A/B
Z-MOS RF Power MOSFET
N-ChaNnCnehlaEnnheal EncnehmanecnetmMeondteMSowdietch Mode RF MOSFET
Low CLaopwacQitgaanncde RZg-MOSTM MOSFET Process
OptimHiziegdh fdovr/RdtF Operation
Ideal fNoranColassescoCn,dDS, w&itEchAinpgplications
VDSS
ID25
= 600 V
= 18 A
Symbol
VDSS
VDGR
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings
600
V
600
V
RDS(on) ≤ 0.56 Ω
PDC
=
350
VGS
VGSM
Continuous
Transient
±20
V
±30
V
ID25
Tc = 25°C
IDM
Tc = 25°C, pulse width limited by TJM
18
A
90
A
IAR
EAR
Tc = 25°C
Tc = 25°C
18
A
TBD
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
5
>200
V/ns
V/ns
PDC
PDHS
PDAMB
RthJC
RthJHS
Tc = 25°C, Derate 4.4W/°C above 25°C
Tc = 25°C
350
W
TBD
W
3.0
W
TBD C/W
TBD C/W
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
TJ
TJM
Tstg
TL
Weight
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 4 ma
600
V
VDS = VGS, ID = 250µΑ
4.6
V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8VDSS
VGS=0
TJ = 25C
TJ =125C
50 µA
1 mA
VGS = 20 V, ID = 0.5ID25
0.53
Ω
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
VDS = 50V, ID = 0.5ID25, pulse test
6.4
S
-55
+175 °C
175
°C
-55
+ 175 °C
1.6mm(0.063 in) from case for 10 s
300
°C
3.5
g
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced Z-MOS process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• High Performance RF Z-MOSTM
• Optimized for RF and high speed
• Common Source RF Package
A = Gate Source Drain
B = Drain Source Gate
• Isolated Package, no insulator
required
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