SIHF840ASTR-E3 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SIHF840ASTR-E3 Datasheet PDF : 8 Pages
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IRF840AS, IRF840AL, SiHF840AS, SiHF840AL
Vishay Siliconix
8.0
6.0
4.0
2.0
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91066
S-81412-Rev. A, 07-Jul-08
www.vishay.com
5
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