AP4501GSD
P-Channel
40
T A =25 o C
30
-10V
-7.0V
-5.0V
-4.5V
20
10
V G = -3 . 0 V
0
0
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
70
I D =-5.0A
T A =25 ℃
60
50
40
2
4
6
8
10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
1
T j =150 o C
0.1
T j =25 o C
0.01
0.1
0.4
0.7
1
1.3
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
40
T A =150 o C
30
20
10
-10V
-7.0V
-5.0V
-4.5V
V G = -3 . 0 V
0
0
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I D =-5.0A
1.6 V G = -10V
1.4
1.2
1
0.8
0.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6/7