4501GSD Ver la hoja de datos (PDF) - Advanced Power Electronics Corp

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componentes Descripción

Fabricante

4501GSD

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp 

AP4501GSD

N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

BVDSS

RDS(ON)

VGS(th)

gfs

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Drain-Source Breakdown Voltage

Static Drain-Source On-Resistance2

Gate Threshold Voltage

Forward Transconductance

Drain-Source Leakage Current (Tj=25oC)

Drain-Source Leakage Current (Tj=70oC)

Gate-Source Leakage

Total Gate Charge2

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time2

Rise Time

Turn-off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS=0V, ID=250uA

VGS=10V, ID=7A

VGS=4.5V, ID=5A

VDS=VGS, ID=250uA

VDS=10V, ID=7A

VDS=30V, VGS=0V

VDS=24V, VGS=0V

VGS=±20V

ID=7A

VDS=24V

VGS=4.5V

VDS=15V

ID=1A

RG=3.3Ω,VGS=10V

RD=15Ω

VGS=0V

VDS=25V

f=1.0MHz

30 - - V

- - 27 mΩ

- - 50 mΩ

1 - 3V

- 12 - S

- - 1 uA

- - 25 uA

- - ±100 nA

- 9 13 nC

- 2 - nC

- 5 - nC

- 6 - ns

- 5 - ns

- 19 - ns

- 4 - ns

- 645 800 pF

- 150 - pF

- 95 - pF

Source-Drain Diode

Symbol

VSD

trr

Qrr

Parameter

Forward On Voltage2

Reverse Recovery Time2

Reverse Recovery Charge

Test Conditions

IS=1.7A, VGS=0V

IS=7A, VGS=0V,

dI/dt=100A/µs

Min. Typ. Max. Units

- - 1.2 V

- 16 - ns

- 10 - nC

2/7

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