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FHX35LG Ver la hoja de datos (PDF) - Eudyna Devices Inc

Número de pieza
componentes Descripción
Fabricante
FHX35LG
EUDYNA
Eudyna Devices Inc EUDYNA
FHX35LG Datasheet PDF : 6 Pages
1 2 3 4 5 6
FHX35LG
FEATURES
• Low Noise Figure: 1.2B (Typ.)@f=12GHz
• High Associated Gain: 10.0dB (Typ.)@f=12GHz
• Lg 0.25µm, Wg = 280µm
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Packaging Available
Super Low Noise HEMT
DESCRIPTION
The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for
general purpose, low noise and high gain amplifiers in the 2-18GHz
frequency range. This device is packaged in cost effective, low parasitic,
hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for
high volume telecommunication, DBS, TVRO, VSAT or other low noise
applications.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Rating
Drain-Source Voltage
VDS
4.0
Gate-Source Voltage
VGS
-3.0
Total Power Dissipation
Pt*
290
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 3 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with
gate resistance of 4000.
3. The operating channel temperature (Tch) should not exceed 80°C.
Unit
V
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
IDSS
gm
Vp
VGSO
NF
Gas
Thermal Resistance
Rth
AVAILABLE CASE STYLES: LG
Note: RF parameters are measured on a sample basis as follows:
VDS = 2V, VGS = 0V
VDS = 2V, IDS = 10mA
VDS = 2V, IDS = 1mA
IGS = -10µA
VDS = 3V, IDS = 10mA
f = 12GHz
Channel to Case
Min.
15
40
-0.2
-3.0
-
8.5
-
Limit
Typ.
40
60
-1.0
-
Max.
85
-
-2.0
-
1.2 1.6
10.0 -
220 300
Lot qty.
1200 or less
1201 to 3200
3201 to 10000
10001 or over
Sample qty.
125
200
315
500
Accept/Reject
(0,1)
(0,1)
(1,2)
(1,2)
Unit
mA
mS
V
V
dB
dB
°C/W
Edition 1.1
July 1999
1

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