K6R4004C1D Ver la hoja de datos (PDF) - Samsung

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componentes Descripción

Fabricante

K6R4004C1D

1M x 4 Bit High-Speed CMOS Static RAM

Samsung 

K6R4004C1D

PRELIMINARY

CMOS SRAM

ABSOLUTE MAXIMUM RATINGS*

Parameter

Voltage on Any Pin Relative to VSS

Voltage on VCC Supply Relative to VSS

Power Dissipation

Storage Temperature

Operating Temperature

Commercial

Industrial

Symbol

VIN, VOUT

VCC

PD

TSTG

TA

TA

Rating

-0.5 to VCC+0.5

-0.5 to 7.0

1.0

-65 to 150

0 to 70

-40 to 85

Unit

V

V

W

°C

°C

°C

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

VCC

4.5

5.0

5.5

V

Ground

VSS

0

0

0

V

Input High Voltage

VIH

2.2

-

VCC+0.5**

V

Input Low Voltage

VIL

-0.5*

-

0.8

V

* The above parameters are also guaranteed at industrial temperature range.

** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA.

*** VIH(Max) = VCC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA.

DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Max Unit

Input Leakage Current

Output Leakage Current

Operating Current

ILI

VIN=VSS to VCC

ILO

CS=VIH or OE=VIH or WE=VIL

VOUT=VSS to VCC

ICC

Min. Cycle, 100% Duty

CS=VIL, VIN=VIH or VIL, IOUT=0mA

-2

2

µA

-2

2

µA

Com.

10ns

-

65

mA

Ind.

10ns

-

75

Standby Current

Output Low Voltage Level

ISB

Min. Cycle, CS=VIH

ISB1

f=0MHz, CS≥VCC-0.2V,

VIN≥VCC-0.2V or VIN≤0.2V

VOL

IOL=8mA

-

20

mA

-

5

-

0.4

V

Output High Voltage Level

VOH

IOH=-4mA

2.4

-

V

* The above parameters are also guaranteed at industrial temperature range.

CAPACITANCE*(TA=25°C, f=1.0MHz)

Item

Input/Output Capacitance

Input Capacitance

Symbol

CI/O

CIN

Test Conditions

VI/O=0V

VIN=0V

TYP

-

-

Max

8

6

Unit

pF

pF

* Capacitance is sampled and not 100% tested.

-4-

Rev. 2.0

July 2004

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