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AMT8312

2.5 Gb/s 850 nm PIN-TIA

ANADIGICS 

AMT8312

Table 3: Electrical Specifications

PARAMETER

MIN TYP MAX UNIT

Wavelength (λ)

Detector Diameter

850 -

nm

-

100

-

µm

Small Signal Differential

Responsivity (@ 100 MHz) (1)

10000 14500 -

V/W

Bandwidth (1)

1500 1800 -

MHz

Low Frequency Cutoff

Output Resistance

-

30

-

kHz

-

50

-

Ω

Optical Overload (2)

0

-

dBm

Optical Sensitivity (2)

-21 -23

-

dBm

Maximum Differential Output Voltage

-

550 700

mV

TRISE and TFALL (20-80%) (3)

Duty Cycle Distortion (4)

-

140

-

ps

-

5

-

%

Total Jitter (4), (5)

60

ps

Supply Current

-

40 60

mA

Operating Voltage Range

+3.0 +3.3 +3.6 Volts

Operating Case Temperature

-30

- +105 °C

Notes:

(1) Measured at -20 dBm optical input power with output connected into RL = 100Ω (differential)

(2) Measured at 10-10 BER with a 223-1 PRBS at 2.5 Gb/s

(3) Measured with a 223-1 PRBS at 2.5 Gb/s, an input optical power of –20 dBm and RL = 100Ω (differential)

(4) Measured with a 223-1 PRBS at 2.5 Gb/s, an input optical power of –3 dBm and RL = 100Ω (differential)

(5) 6 σ about the center eye crossing.

PRELIMINARY DATA SHEET - Rev 1.0

3

09/2003

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