CLY2 Ver la hoja de datos (PDF) - TriQuint Semiconductor

Número de pieza

componentes Descripción

Fabricante

CLY2

High-Power Packaged GaAs FET

TriQuint Semiconductor 

CLY2 Datasheet

Electrical Characteristics (cont)

1dB-Compression Point

P1dB

-

23.5

-

dBm

VDS = 3 V ID = 180 mA f = 1.8 GHz

1dB-Compression Point

P1dB

-

27.0

-

dBm

VDS = 5 V ID = 180 mA f = 1.8GHz

Power Added Efficiency

PAE

-

55

-

%

VDS = 3 V ID = 180 mA f = 1.8 GHz

Pin = 10 dBm

Noise figure

NF

1.48

dB

VDS = 3 V ID = 180 mA f = 1.8GHz

*) Matching conditions for maximum small signal gain (not identical with power matching conditions!)

**) Power matching conditions: f=1.8GHz:

Source Match: Γms: MAG = 0.74, ANG 132°; Load Match: Γml: ;MAG 0.61, ANG -153°

For additional information and latest specifications, see our website: www.triquint.com

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Revision C, December 14, 2005

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