C106D Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
C106D Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
Thyristors logic level
Product specification
C106D
GENERAL DESCRIPTION
Passivated, sensitive gate thyristor in a
plastic envelope, intended for use in general
purpose switching and phase control
applications. This device is intended to be
interfaced directly to microcontrollers, logic
integrated circuits and other low power gate
trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDRM
VRRM
IT(AV)
IT(RMS)
ITSM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
MAX. UNIT
400 V
2.5 A
4
A
38
A
PINNING - SOT32
PIN
DESCRIPTION
1 cathode
2 anode
3 gate
PIN CONFIGURATION
Top view 1 2 3
MBC077 - 1
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
-
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current half sine wave; Tmb ≤ 113 ˚C
-
RMS on-state current
all conduction angles
-
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
-
t = 8.3 ms
-
I2t for fusing
t = 10 ms
-
Repetitive rate of rise of ITM = 10 A; IG = 50 mA;
-
on-state current after
dIG/dt = 50 mA/µs
triggering
Peak gate current
-
Peak gate voltage
-
Peak reverse gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
4001
2.5
4
35
38
6.1
50
2
5
5
5
0.5
150
1252
UNIT
V
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
July 2001
2
Rev 1.000
Share Link: 