SGW15N60 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

SGW15N60

Fast IGBT in NPT-technology

Infineon Technologies 

SGP15N60

SGW15N60

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=25°C,

VCC=400V,IC=15A,

VGE=0/15V,

RG=21Ω,

Lσ1) =180nH,

Cσ1) =250pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

32

23

234

46

0.30

0.27

0.57

Unit

max.

38 ns

28

281

55

0.36 mJ

0.35

0.71

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=150°C

VCC=400V,IC=15A,

Lσ1)=180nH,

Cσ1)=250pF

VGE=0/15V,

RG=21Ω

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

31

23

261

54

0.45

0.41

0.86

Unit

max.

38 ns

28

313

65

0.54 mJ

0.53

1.07

1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

3

Rev. 2.3 Sep 08

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