SGW15N60 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
SGW15N60 Datasheet PDF : 7 Pages
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1800
1500
1200
Cies
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
900
Coes
600
Cres
300
0
1
10
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
IC = 15A
TC = 25℃ ━━
T = 125℃ ------
C
Toff
Toff
Tf
Tf
100
1
10
100
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
VGE = ± 15V, RG = 13Ω
TC = 25℃ ━━
TC = 125℃ ------
Ton
100
Tr
10
5
10
15
20
25
30
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 15A
TC = 25℃ ━━
TC = 125℃ ------
Ton
100
Tr
10
1
10
100
Gate Resistance, RG [Ω]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 15A
C
T = 25℃ ━━
C
TC = 125℃ ------
Eoff
Eon
Eoff
100
1
10
100
Gate Resistance, RG [Ω ]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V =±
GE
15V,
R
G
=
13Ω
T = 25℃ ━━
C
T = 125℃ ------
C
Toff
Tf
Toff
100
Tf
5
10
15
20
25
30
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGW15N60RUF Rev. A1
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