E3150 Ver la hoja de datos (PDF) - Changzhou Shunye Electronics Co.,Ltd.

Número de pieza

componentes Descripción

Fabricante

E3150

EB SERIES TRANSISTORS

Changzhou Shunye Electronics Co.,Ltd. 

SY semiconductors

Shenzhen SY Semiconductors Co.，LTD.

EB SERIES TRANSISTORS

E3150

●FEATURES：①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA

●APPLICATION：①FLUORESCENT LAMP ②ELECTRONIC BALLAST

●Absolute Maximum Ratings (Tc=25℃)

PARAMETER

Collector–Base Voltage

Collector–Emitter Voltage

Emitter –Base Voltage

Collector Current

Junction Temperature

Storage Temperature

SYMBOL

VCBO

VCEO

VEBO

IC

Tj

Tstg

VALUE

700

600

9

1.5

150

-65-150

UNIT

V

V

V

A

℃

℃

TO-220 NPN

● Electronic Characteristics (Tc=25℃)

CHARACTERISTICS

SYMBOL

Collector–Base Cutoff Current

ICBO

Collector–Emitter Cutoff Current

ICEO

Collector–Emitter Voltage

VCEO

Emitter –Base Voltage

VEBO

Collector–Emitter Saturation

Voltage

Vcesat

Base–Emitter Saturation Voltage Vbesat

DC Current Gain

HFE

TEST CONDITION

VCB=700v

VCE=600v

IC=10mA IB=0

IE=1mA IC=0

IC=1A IB=0.25A

IC=0.5A IB=0.1A

VCE=5v IC=1mA

VCE=5v IC=0.2A

VCE=5v IC=1.0A

MIN

600

9

MAX

100

250

UNIT

µA

µA

V

V

1.0 V

1.2 V

7

10

40

5

●CLASSIFICATION OF HFE

HFE

15-20

20-25

25-30

30-35

SY semiconductors

1/2

Share Link: