FGH30N120FTD Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FGH30N120FTD Datasheet PDF : 9 Pages
| |||
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
4
60A
30A
IC = 15A
0
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 200V
9
600V
400V
6
3
0
0
50
100
150
200
250
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
500
100
tr
10
0
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
20
40
60
80
100
Gate Resistance, RG [Ω]
Figure 8. Capacitance Characteristics
8000
6000
Common Emitter
Cies
VGE = 0V, f = 1MHz
TC = 25oC
4000
2000
Coes
Cres
0
1
10
30
Collector-Emitter Voltage, VCE [V]
Figure 10. SOA Characteristics
200
100
10µs
100µs
10
1ms
10 ms
DC
1
*Notes:
0.1
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1
10
100
1000 3000
Collector-Emitter Voltage, VCE [V]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
2000
1000
td(off)
100
50
0
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
20
40
60
80
100
Gate Resistance, RG [Ω]
FGH30N120FTD Rev. A
5
www.fairchildsemi.com
Share Link: 