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Número de pieza
componentes Descripción
FGH30N120FTD Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FGH30N120FTD
1200V, 30A Trench IGBT
Fairchild Semiconductor
FGH30N120FTD Datasheet PDF : 9 Pages
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Electrical Characteristics of the Diode
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V
FM
Diode Forward Voltage
I
F
= 30A
T
C
= 25
o
C
T
C
= 125
o
C
t
rr
I
rr
Diode Reverse Recovery Time
I
F
=30A,
Diode Peak Reverse Recovery Current
di/dt = 200A/
µ
s
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
Q
rr
Diode Reverse Recovery Charge
T
C
= 25
o
C
T
C
= 125
o
C
Min.
-
-
-
-
-
-
-
-
Typ.
1.3
1.3
730
775
43
47
5.9
18.2
Max
1.7
-
-
-
-
-
-
-
Units
V
ns
A
µ
C
FGH30N120FTD Rev. A
3
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