BUZ22 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BUZ22

SIPMOS ® Power Transistor

Infineon Technologies 

BUZ 22

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C

Gate threshold voltage

VGS=VDS, ID = 1 mA

Zero gate voltage drain current

VDS = 100 V, VGS = 0 V, Tj = 25 ˚C

VDS = 100 V, VGS = 0 V, Tj = 125 ˚C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-resistance

VGS = 10 V, ID = 22 A

Symbol

min.

Values

Unit

typ.

max.

V(BR)DSS

100

VGS(th)

2.1

IDSS

-

-

IGSS

-

RDS(on)

-

V

-

-

3

4

µA

0.1

1

10

100

nA

10

100

Ω

0.05

0.055

Data Sheet

2

05.99

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