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2SC2073

NPN EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

2SC2073

Preliminary NPN EPITAXIAL SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

VCBO

150

V

VCEO

150

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

Continuous

Peak

IC

ICM

1.5

3.0

A

A

Base Current

IB

0.5

A

Total Power Dissipation @ TC=25°C

Derate above 25°C

PD

25

W

0.2

W/°C

Junction Temperature

Storage Temperature

TJ

-55~+150

°C

TSTG

-55~+150

°C

Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 THERMAL CHARACTERISTICS

PARAMETER

Junction-to-Case

SYMBOL

θJC

RATINGS

5.0

 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

UNIT

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

BVCBO

BVCEO

BVEBO

ICBO

IEBO

IC=1.0mA, IB=0

IC=5.0mA, IB=0

IB=1.0mA, IC=0

VCB=120V, IE=0

VEB=5.0V, IC=0

ON CHARACTERISTICS (Note 1)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

hFE

VCE(SAT)

VBE(ON)

VCE=10V, IC=0.5A

IC=0.5A, IB=50mA

IC=500mA, VCE=10V

DYNAMIC CHARACTERISTICS

Current-Gain -Bandwidth Product

fT

IC=0.5A,VCE=10V, f=1.0MHz

Notes: Pulse Test: Pulse Width=300μs, Duty Cycle≤2.0%.

MIN TYP MAX UNIT

150

V

150

V

5.0

V

10 μA

10 μA

40

140

1.5 V

0.65

0.85 V

4.0

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R221-021.a

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