MPS2222A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Output Admittance
VCE = 10 V, IC = 1 mA,
f = 1 kHz
5.0
hoe
—
35
µS
VCE = 10 V, IC = 10 mA,
f = 1 kHz
25
—
200
Small Signal Current Gain
VCE = 10 V, IC = 1 mA,
f = 1 kHz
50
hfe
VCE = 10 V, IC = 10 mA,
f = 1 kHz
75
—
300
—
—
375
Collector Base Time Constant
rb’CC
IE = 20 mA, VCB = 20 V,
f = 31.8 MHz
—
—
150
ps
Noise Figure
NF
VCE = 10 V, IC = 100 µA,
RS = 1 kΩ, f = 1 kHz
—
—
4.0
dB
Delay Time (see Fig. 1)
td
IB1 = 15 mA, IC = 150 mA
VCC = 30 V VBE = –0.5 V
—
—
10
ns
Rise Time (see Fig. 1)
tr
IB1 = 15 mA, IC = 150 mA
VCC = 30 V VBE = –0.5 V
—
—
25
ns
Storage Time (see Fig. 2)
ts
IB1= IB2 =15 mA, IC = 150 mA
VCC = 30 V
—
—
225
ns
Fall Time (see Fig. 2)
tf
IB1 = IB2 = 1 mA, IC = 10 mA
VCC = 30 V
—
—
60
ns
Switching Time Equivalent Test Circuit
+16 V
0
-2 V
Figure 1 - Turn-On Time
1.0 to 100 µs, DUTY CYCLE ≈ 2%
1kΩ
< 2 ns
+30V
200Ω
+16 V
CS* < 10 pF
Scope rise time < 4ns
*Total shunt capacitance of test jig,
connectors and oscilloscope
0
-14 V
Figure 2 - Turn-Off Time
1.0 to 100 µs, DUTY CYCLE ≈ 2%
+30V
200Ω
< 20 ns
1kΩ
-4 V
CS* < 10 pF
Document Number 88231
10-May-02
www.vishay.com
3