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MPS2222A Datasheet PDF : 3 Pages
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MPS2222A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
DC Current Gain
VCE = 10 V, IC = 0.1 mA
VCE = 10 V, IC = 1 mA
VCE = 10 V, IC = 10 mA
hFE
VCE = 10 V, IC = 10 mA
TA = -55°C
VCE = 10 V, IC = 150 mA(1)
VCE = 1.0 V, IC = 150 mA(1)
VCE = 10 V, IC = 500 mA(1)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage(1)
V(BR)CBO
V(BR)CEO
IC = 10 µA, IE = 0
IC = 10 mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 10 µA, IC = 0
Collector-Emitter Saturation Voltage(1)
VCEsat
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Base-Emitter Saturation Voltage(1)
VBEsat
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Collector Cut-off Current
ICEV
VEB = 3 V, VCE = 60 V
Collector Cut-off Current
ICBO
VCB = 60 V, IE = 0
VCB = 50V, IE = 0,TA = 125°C
Emitter Cut-off Current
IEBO
VEB = 3 V, IC = 0
Base Cut-off Current
IBL
VCE = 60 V, VEB = 3.0 V
Input Impedance
VCE = 10 V, IC = 1 mA,
f = 1 kHz
hie
VCE = 10 V, IC = 10 mA,
f = 1 kHz
Voltage Feedback Ratio
VCE = 10 V, IC = 1 mA,
f = 1 kHz
hre
VCE = 10 V, IC = 10 mA,
f = 1 kHz
Current Gain-Bandwidth Product
fT
VCE = 20 V, IC = 20 mA
f = 100 MHz
Output Capacitance
COBO VCB = 10 V, f = 1 MHz, IE = 0
Input Capacitance
CIBO VEB = 0.5 V, f = 1 MHz, IC = 0
Note: (1) Pulse test: pulse width ≤ 300 µs, cycle ≤ 2%
Min
35
50
75
35
100
50
40
75
40
6.0
—
—
0.6
—
—
—
—
—
—
2.0
0.25
—
—
300
—
—
Typ
Max
Unit
—
—
—
—
—
—
—
—
—
—
300
—
—
—
—
—
—
V
—
—
V
—
—
V
—
—
0.3
1.0
V
—
—
1.2
2.0
V
—
10
nA
—
—
0.01
10
µA
—
100
nA
—
20
nA
—
8.0
kΩ
—
1.25
—
8 • 10-4
—
—
4 • 10-4
—
—
MHz
—
8.0
pF
—
25
pF
www.vishay.com
2
Document Number 88231
10-May-02
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