Electrical Characteristics
TA = 25°C, unless otherwise specified.
Symbol
Parameter
Conditions
Min. Typ. Max.
SenseFET Section
IDSS
RDS(ON)
Zero-Gate-Voltage Drain Current
Drain-Source On-State Resistance(5)
VDS=650V, VGS=0V
VDS=520V, VGS=0V, TC=125°C
VGS=10V, ID=0.5A
25
200
16 22
gfs
Forward Trans-Conductance
VDS=50V, ID=0.5A
1.0 1.3
CISS
COSS
Input Capacitance
Output Capacitance
162
VGS=0V, VDS=25V,
18
f=1MHz
CRSS
Reverse Transfer Capacitance
3.8
Control Section
fOSC
ΔfOSC
Switching Frequency
Switching Frequency Variation(6)
DMAX
Maximum Duty Cycle
VSTART
VSTOP
UVLO Threshold Voltage
IFB
Feedback Source Current
tS/S
Internal Soft Start Time
Burst Mode Section
-25°C ≤ TA ≤ 85°C
VFB=GND
VFB=GND
0V ≤ VFB ≤ 3V
61 67 73
±5 ±10
60 67 74
8
9
10
6
7
8
0.35 0.40 0.45
10 15 20
VBURH
VBURL
Burst Mode Voltage
VBUR(HYS)
Protection Section
TJ=25°C
Hysteresis
0.6 0.7 0.8
0.45 0.55 0.65
150
ILIM
Peak Current Limit
TSD
Thermal Shutdown Temperature(7)
0.475
125
VSD
Shutdown Feedback Voltage
4.0
VOVP
Over-Voltage Protection
20
IDELAY
Shutdown Delay Current
3V ≤ VFB ≤ VSD
4
Total Device Section
IOP
Operating Supply Current (8)
VCC ≤ 16V
ICH
Start-Up Charging Current
VCC=0V , VSTR=50V
450
Notes:
5. Pulse test: Pulse width ≤ 300µs, duty ≤ 2%.
6. These parameters, although guaranteed, are tested in EDS (wafer test) process.
7. These parameters, although guaranteed, are not 100% tested in production.
8. Control part only.
0.550
145
4.5
5
1.5
550
0.650
5.0
6
3.0
650
Unit
µA
Ω
S
pF
kHz
%
%
V
V
mA
ms
V
V
mV
A
°C
V
V
µA
mA
µA
© 2007 Fairchild Semiconductor Corporation
FSQ100 Rev. 1.0.1
5
www.fairchildsemi.com