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VN0606L-G

N-Channel Enhancement-Mode Vertical DMOS FET

Supertex Inc 

VN0606

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

► Low CISS and fast switching speeds

► Excellent thermal stability

► Integral source-drain diode

► High input impedance and high gain

Applications

► Motor controls

► Converters

► Amplifiers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

General Description

This enhancement-mode (normally-off) transistor utilizes a

vertical DMOS structure and Supertex’s well-proven, silicon-

gate manufacturing process. This combination produces a

device with the power handling capabilities of bipolar transistors

and the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Ordering Information

Device

Package Options

TO-92

VN0606

VN0606L-G

-G indicates package is RoHS compliant (‘Green’)

BVDSS/BVDGS

(V)

60

RDS(ON)

(max)

(Ω)

3.0

Pin Configurations

ID(ON)

(min)

(A)

1.5

Absolute Maximum Ratings

SOURCE

DRAIN

Parameter

Value

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

BVDSS

BVDGS

±30V

GATE

TO-92 (L)

Product Marking

Operating and storage temperature -55OC to +150OC

Soldering temperature*

300OC

Absolute Maximum Ratings are those values beyond which damage to

the device may occur. Functional operation under these conditions is not

implied. Continuous operation of the device at the absolute rating level may

affect device reliability. All voltages are referenced to device ground.

Si VN YY = Year Sealed

0 6 0 6 L WW = Week Sealed

YYWW

= “Green” Packaging

Package may or may not include the following marks: Si or

TO-92 (L)

* Distance of 1.6mm from case for 10 seconds.

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

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