DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IXGH24N50B Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
IXGH24N50B
IXYS
IXYS CORPORATION IXYS
IXGH24N50B Datasheet PDF : 4 Pages
1 2 3 4
IXGH24N50B
IXGH24N60B
Symbol
gfs
Cies
C
oes
Cres
Qg
Q
ge
Qgc
t
d(on)
tri
E
on
td(off)
t
fi
Eoff
t
d(on)
tri
E
on
td(off)
tfi
Eoff
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE
CES
9 13
S
1500
135
40
90
11
30
pF
pF
pF
120 nC
15 nC
40 nC
Inductive
load,
T
J
=
25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may
increase for V (Clamp) > 0.8 • V ,
CE
CES
higher TJ or increased RG
Inductive load, TJ = 125°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
25
ns
15
ns
0.6
mJ
150 200 ns
80 150 ns
24N50B 0.62
mJ
24N60B 0.80
mJ
25
ns
15
ns
0.8
mJ
250
ns
100
ns
24N50B 0.9
mJ
24N60B 1.4
mJ
0.83 K/W
0.25
K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F
5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J
1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L
4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]