IXFC26N50 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFC26N50 Datasheet PDF : 2 Pages
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Symbol
gfs
C
iss
Coss
C
rss
t
d(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 15 V; ID = IT
Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 1 Ω (External),
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
11 21
S
4200
pF
450
pF
135
pF
16
ns
33
ns
65
ns
30
ns
135
nC
28
nC
62
nC
0.54 K/W
0.30
K/W
IXFC 26N50
IXFC 24N50
ISOPLUS220 OUTLINE
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
t
rr
TJ = 25°C
QRM
IF = Is, -di/dt = 100 A/µs,
VR = 100 V
TJ = 125°C
TJ = 25°C
TJ = 125°C
IRM
TJ = 25°C
TJ = 125°C
26 A
104 A
1.5 V
250 ns
400 ns
1
1 µC
2
µC
10
A
15
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IT test current: IXFC26N50
IT = 13A
IXFC24N50
IT = 12A
3. See IXFH26N50 data sheet for characteristic curves.
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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