ESM6045DV(1997) Ver la hoja de datos (PDF) - STMicroelectronics
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ESM6045DV Datasheet PDF : 8 Pages
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ESM6045DV
NPN DARLINGTON POWER MODULE
s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW Rth JUNCTION CASE
s SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s ULTRAFAST FREEWHEELING DIODE
s ISOLATED CASE (2500V RMS)
s EASY TO MOUNT
s LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
s MOTOR CONTROL
s SMPS & UPS
s DC/DC & DC/AC CONVERTERS
s WELDING EQUIPMENT
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCEV Collector-Emitter Voltage (VBE = -5 V)
VCEO(sus) Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC
Collector Current
ICM Collector Peak Current (tp = 10 ms)
IB
Base Current
IBM Base Peak Current (tp = 10 ms)
Ptot Total Dissipation at Tc = 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
VISO Insulation Withstand Voltage (AC-RMS)
September 1997
Value
600
450
7
84
126
8
16
250
-55 to 150
150
2500
Unit
V
V
V
A
A
A
A
W
oC
oC
oC
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