FCA35N60 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FCA35N60 Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
200
VGS = 15.0 V
100
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
1
0.3
0.1
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
1
10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.24
0.20
0.16
0.12
0.08
0.04
0
VGS = 10V
VGS = 20V
*Note: TC = 25oC
25
50
75
100
125
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
50000
10000
Ciss
1000
*Note:
1. VGS = 0V
100 2. f = 1MHz
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
0.1
1
10
100
VDS, Drain-Source Voltage [V]
Crss
600
Figure 2. Transfer Characteristics
200
100
150oC
10
-55oC
25oC
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
1
4
5
6
7
8
9
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
100
150oC
25oC
10
*Notes:
1. VGS = 0V
1
0.2 0.4
2. 250µs Pulse Test
0.8
1.2
1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8
VDS = 400V
6
4
2
*Note: ID = 35A
0
0
40
80
120
160
Qg, Total Gate Charge [nC]
FCA35N60 Rev. A
3
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