J5027 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

J5027

NPN Silicon Transistor

Fairchild Semiconductor 

FJP5027

High Voltage and High Reliability

• High Speed Switching

• Wide SOA

1

TO-220

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

VCBO

VCEO

VEBO

IC

ICP

IB

PC

TJ

TSTG

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

Collector Dissipation ( TC=25°C)

Junction Temperature

Storage Temperature

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

BVCBO

BVCEO

BVEBO

VCEX(sus)

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VBE(sat)

Cob

fT

tON

tSTG

tF

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Sustaining Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Product

Turn On Time

Storage Time

Fall Time

Test Condition

IC = 1mA, IE = 0

IC = 5mA, IB = 0

IE = 1mA, IC = 0

IC = 1.5A, IB1 = -IB2 = 0.3A

L = 2mH, Clamped

VCB = 800V, IE = 0

VEB = 5V, IC = 0

VCE = 5V, IC = 0.2A

VCE = 5V, IC = 1A

IC = 1.5A, IB = 0.3A

IC = 1.5A, IB = 0.3A

VCB = 10V, IE = 0, f = 1MHz

VCE = 10V, IC = 0.2A

VCC = 400V

IC = 5IB1 = -2.5IB2 = 2A

RL = 200Ω

Value

1100

800

7

3

10

1.5

50

150

- 55 ~ 150

Min.

1100

800

7

800

Typ.

10

8

60

15

Units

V

V

V

A

A

A

W

°C

°C

Max.

Units

V

V

V

V

10

µA

10

µA

40

2

V

1.5

V

pF

MHz

0.5

µs

3

µs

0.3

µs

hFE Classification

Classification

hFE1

N

10 ~ 20

R

15 ~ 30

O

20 ~ 40

©2003 Fairchild Semiconductor Corporation

Rev. A, December 2003

Share Link: